A RADIANT HEATED REACTOR WITH MULTISTEP PROCESS CAPABILITY

A single chamber multi-process reactor employing a quartz chamber with a radiantly heated graphite susceptor has been developed. A variety o f processes can be performed sequentially in the system with minimum d elay between process steps. Processes available at present include pla sma etching/substrate cleaning, CVD silicon and plasma enhanced silico n nitride deposition. The system has to date been used for fabrication of thin film transistors at low temperatures for applications on glas s substrates. The individual processes have yielded results comparable to those of single step reactors. The system is best exploited when m ulti-layer structures are required with minimal contamination between layers. Results of SIMS analysis has revealed excellent interface prop erties between films deposited sequentially in the system.