A single chamber multi-process reactor employing a quartz chamber with
a radiantly heated graphite susceptor has been developed. A variety o
f processes can be performed sequentially in the system with minimum d
elay between process steps. Processes available at present include pla
sma etching/substrate cleaning, CVD silicon and plasma enhanced silico
n nitride deposition. The system has to date been used for fabrication
of thin film transistors at low temperatures for applications on glas
s substrates. The individual processes have yielded results comparable
to those of single step reactors. The system is best exploited when m
ulti-layer structures are required with minimal contamination between
layers. Results of SIMS analysis has revealed excellent interface prop
erties between films deposited sequentially in the system.