GROWTH OF BETA-SIC LAYERS BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION

A rapid thermal chemical vapour deposition system has been employed fo r the deposition of SiC layers in the temperature range 1000-1040-degr ees-C. Layers have been shown to be polycrystalline beta-SiC strongly aligned to the silicon substrate. Carbon content has been controlled o ver the range 6-50% and U.V. spectroscopy has related carbon content t o cut off wavelength. Oxygen content in layers has been minimised and shown to be related to carbon concentration. Growth has occurred initi ally at localised preferred sites and time periods in excess of 60 sec onds have been shown necessary at 1040-degrees-C to achieve growth of SiC over the entire surface area.