Electron beam testers, due to their high spatial resolution, are accep
ted tools for chip-internal measurements on today's sub-micrometer str
uctures. To keep pace also with the development of high-speed integrat
ed circuits, though, the temporal resolution of electron beam measurem
ents still has to be improved. The paper aims to contribute to that. I
t shows, that the time resolution of the employed sampling technique i
s still mainly limited by the duration of the electron beam pulse, dis
cusses the mechanisms of beam pulse generation and deduces the design
of an optimized beam deflection assembly. Simulation results for the a
chievable performance are presented as well as experimental results ob
tained by time resolved monitoring of the-beam in a dedicated streak-c
amera assembly.