HIGH-FIELD EBIC BY COMPUTER CONTROLLING

High field avalanching in thin insulator and semiconductor layers is i nvestigated by means of electron beam induced conductivity (EBIC). A d igital scanning electron microscope DSM 960 provides a precise electro n beam system for quantitative EBIC measurements in metal-insulator-se miconductor structures. A remote microscope control has been performed for automatic measurements and data processing. We obtain the avalanc he coefficient alpha as a function of field strength F = (10(5)-10(7)) V/cm. Moreover we get information on the energy-range-relation for el ectrons in the thin layer structures, the inner secondary electron (SE ) generation and the related creation energy for SE.