SEM EBIC CHARACTERIZATION OF DEGRADATION AT MIRRORS OF GAAS ALGAAS LASER-DIODES/

Laser operation-induced migration of beryllium at mirrors of single qu antum well, ridge geometry type GaAs/AlGaAs diode lasers was studied b y electron-beam-induced current. In these devices an operation-induced displacement of the p-n junction towards the n-type cladding has been observed close to the mirrors. A similar effect was induced by electr on-beam irradiation of the mirror facets in a scanning electron micros cope. These effects have been attributed to recombination-enhanced dif fusion/migration of beryllium from the p-type cladding. From the measu red diffusion coefficient of beryllium we have estimated the average m irror temperature during laser operation, which was found to be in exc ellent agreement with measured temperatures published recently.