STM STUDIES OF SI AND C EVAPORATION ON SI(111) AT RT BY LASER-ABLATION

Authors
DIAZ J FERRER S COMIN F
Citation
J. Diaz et al., STM STUDIES OF SI AND C EVAPORATION ON SI(111) AT RT BY LASER-ABLATION, Microscopy microanalysis microstructures, 5(1), 1994, pp. 57-59
Citations number
12
Categorie Soggetti
Spectroscopy,Microscopy
Journal title
Microscopy microanalysis microstructures → ACNP
ISSN journal
11542799
Volume
5
Issue
1
Year of publication
1994
Pages
57 - 59
Database
ISI
SICI code
1154-2799(1994)5:1<57:SSOSAC>2.0.ZU;2-6
Abstract
Silicon and carbon have been deposited on Si (111) under UHV by means of the pulsed laser evaporation technique. The evaporated species cont ain ions of kinetic energies as high as 2 KeV for Si and 800 eV for C, i.e. much higher than in thermal evaporation. STM images of about 0.0 1 deposited monolayers reveal that some damage is produced on the subs trate. The damaged areas consist mainly in monoatomic vacancies of the so called adatoms, displaced adatoms and agglomerates of vacancies.