GAMMA-RAY DETECTORS FROM THERMALLY ANNEALED BRIDGMAN-GROWN CDTE

Citation
D. Alexiev et al., GAMMA-RAY DETECTORS FROM THERMALLY ANNEALED BRIDGMAN-GROWN CDTE, Journal of crystal growth, 142(3-4), 1994, pp. 303-309
Citations number
15
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
142
Issue
3-4
Year of publication
1994
Pages
303 - 309
Database
ISI
SICI code
0022-0248(1994)142:3-4<303:GDFTAB>2.0.ZU;2-G
Abstract
The characteristics of small gamma-ray probe detectors (hemispherical contact geometry) made from Cl- and In-doped Bridgman-grown crystals o f CdTe are described. A slow, low-temperature anneal of as-grown CdTe ranging from 485 to 85-degrees-C, and cooled at a rate of < 20-degrees -C/h, was found to greatly improve detector performance. Best photopea k to Compton edge ratios were 2:1 for 662 keV gamma-rays. Typical valu es were 1:1 with energy resolutions of 5% full width at half maximum. Energy resolution was approximately 13.5% for 185 keV gamma-rays from a U-235 (93%) source.