TWINNING AND THE FORMATION OF THE DIAMOND HEXAGONAL PHASE IN SI-GE SHORT-PERIOD SUPERLATTICES

Citation
M. Dynna et Gc. Weatherly, TWINNING AND THE FORMATION OF THE DIAMOND HEXAGONAL PHASE IN SI-GE SHORT-PERIOD SUPERLATTICES, Journal of crystal growth, 142(3-4), 1994, pp. 315-321
Citations number
28
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
142
Issue
3-4
Year of publication
1994
Pages
315 - 321
Database
ISI
SICI code
0022-0248(1994)142:3-4<315:TATFOT>2.0.ZU;2-4
Abstract
The structure of as-grown and thermally annealed (Si17.5Ge7)8 atomic l ayer superlattices has been studied by cross-sectional and plan view t ransmission electron microscopy. The as-grown structure contains twins and small clusters identified as the diamond hexagonal phase. The vol ume fraction of twins and the diamond hexagonal phase increase on anne aling at 700-degrees-C as the stresses in the structure are relaxed. T he formation of the diamond hexagonal phase is thought to occur at twi n-twin intersections, as previously reported in the literature for Si and Ge subjected to high stresses during indentation testing.