HIGHLY SENSITIVE IN0.53GA0.47AS INP HALL SENSORS GROWN BY MOVPE/

High performance InP/InGaAs Hall sensors appropriate for applications requiring high sensitivity at low power dissipation, good linearity, l ow temperature sensitivity, and high resolution are reported. The laye r structures grown by MOVPE combine a high mobility In0.53Ga0.47As cha nnel with isolation by semi-insulating InP. With this design bias curr ent related sensitivities up to 760 V/AT at sheet resistances below 84 0 Omega/square have been achieved, allowing high output signals at low power dissipation. Due to the active layer isolation by semi-insulati ng InP, bias currents are not limited by channel pinch-off or junction breakdown. This leads to absolute sensitivities as high as 12.5 V/T. Linearity errors are lower than -0.8% up to magnetic fields of 0.5 T. Temperature coefficients of the sensitivity were measured for differen t donor concentrations of the active layer. The lowest value of -0.07% /K was found for a doping of 10(16) cm(-3), in accordance with theoret ical predictions. High signal-to-noise ratios corresponding to minimal detectable fields of 50 nT/Hz(1/2) and 160 nT/Hz(1/2), respectively, were measured at 1 kHz and 100 Hz.