EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS

Authors
YOON GW JOSHI AB KWONG DL MATHEWS VK THAKUR RPS FAZAN PC
Citation
Gw. Yoon et al., EFFECTS OF SURFACE PRETREATMENT OF POLYSILICON ELECTRODE PRIOR TO SI3N4 DEPOSITION ON THE ELECTRICAL CHARACTERISTICS OF SI3N4 DIELECTRIC FILMS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 347-351
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
3
Year of publication
1994
Pages
347 - 351
Database
ISI
SICI code
0018-9383(1994)41:3<347:EOSPOP>2.0.ZU;2-F
Abstract
Effects of various surface pretreatments of polysilicon electrode prio r to Si3N4 deposition on leakage current, time-dependent dielectric br eakdown (TDDB) and charge trapping characteristics of thin Si3N4 films deposited on rugged and smooth poly-Si are investigated, Surface pret reatments consist of different combinations of HP clean, rapid thermal H-2-Ar clean, and rapid thermal NH3-nitridation (RTN) and are intende d to modify the surface of bottom poly-Si electrode. Results show that RTN treatments lead to lower leakage current, reduced charge trapping , and superior TDDB characteristics as compared to rapid thermal H-2-A r clean.