AN IMPROVED ANALYTICAL MODEL FOR COLLECTOR CURRENTS IN LATERAL BIPOLAR-TRANSISTORS

Detailed analyses of the lateral bipolar transistor have been performe d and a physically based model far the collector current developed. Hy brid mode operation of the lateral BJT in the presence of a gate elect rode has been considered. Two-dimensional current flow in the base has also been taken into account without the use of empirical parameters. Comparisons with numerical simulations, existing models, and experime ntal data have been performed to demonstrate the accuracy and improvem ents realized by the new model.