A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION

Authors
VASUDEVAN V VASI J
Citation
V. Vasudevan et J. Vasi, A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATION, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 383-390
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
3
Year of publication
1994
Pages
383 - 390
Database
ISI
SICI code
0018-9383(1994)41:3<383:A2NOOC>2.0.ZU;2-D
Abstract
We have developed a time-dependent two-dimensional simulator in order to simulate charge trapping in silicon dioxide due to radiation. The P oisson and continuity equations are solved both in the oxide and the s emiconductor. In addition, in order to simulate charge trapping, trap rate equations using first-order trapping kinetics are solved in the o xide. This paper contains the numerical methods used in the simulation and results obtained using this simulator. One of the main results of this simulation is the presence of a lateral variation in the radiati on-induced oxide charge in an MOS transistor irradiated with a drain b ias.