THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND OR FURNACE/

Authors
HSIEH JC FANG YK CHEN CW TSAI NS LIN MS TSENG FC
Citation
Jc. Hsieh et al., THE ANOMALOUS THRESHOLD VOLTAGE SHIFT OF N-MOSFET AND P-MOSFET UNDER FLOW AND REFLOW OF BPSG FILM WITH RTA AND OR FURNACE/, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 458-460
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
3
Year of publication
1994
Pages
458 - 460
Database
ISI
SICI code
0018-9383(1994)41:3<458:TATVSO>2.0.ZU;2-H
Abstract
Different post oxide annealing technologies, i.e., furnace and/or RTA were done in Borophosphosilicate glass (BPSG) films flow and reflow. I t is found that the threshold voltage shift is apparent in P-MOSFET bu t small in N-MOSFET for device with RTA reflow. Base on the charge pum ping measurement, the donor-type interface states generated by RTA ref low process are supposed to play a major role in this shift. We explai n the mechanism of RTA induced donor-like interface states in detail.