Authors
Citation
K. Joardar, A NOVEL TEST STRUCTURE FOR MONITORING DOPING VARIATIONS IN A MOSFET, Solid-state electronics, 37(11), 1994, pp. 1793-1797
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
11
Year of publication
1994
Pages
1793 - 1797
Database
ISI
SICI code
0038-1101(1994)37:11<1793:ANTSFM>2.0.ZU;2-J
Abstract
A new test structure and measurement technique is described that allow
s improved monitoring of the integrated channel doping in MOSFETs whic
h is the primary cause of statistical threshold voltage fluctuations.
The methodology is physically based and has been applied successfully
to a 0.8 mum BiCMOS process. The advantages of this approach over the
conventional method are demonstrated. Results obtained from high volum
e testing are also presented.