X-RAY-DIFFRACTION STUDY OF THE LAYERED SEMICONDUCTOR GE+ -DELTA-BI2TE4/

Authors
KARPINSKII OG SHELIMOVA LE KRETOVA MA
Citation
Og. Karpinskii et al., X-RAY-DIFFRACTION STUDY OF THE LAYERED SEMICONDUCTOR GE+ -DELTA-BI2TE4/, Inorganic materials, 29(12), 1993, pp. 1446-1449
Citations number
6
Categorie Soggetti
Material Science
Journal title
Inorganic materials → ACNP
ISSN journal
00201685
Volume
29
Issue
12
Year of publication
1993
Pages
1446 - 1449
Database
ISI
SICI code
0020-1685(1993)29:12<1446:XSOTLS>2.0.ZU;2-4