MICROPROFILE SIMULATIONS FOR PLASMA-ETCHING WITH SURFACE PASSIVATION

A numerical algorithm and simulation results are presented for microsc opic profile evolution of material surfaces subject to plasma etching (reactive-ion etching) and surface passivation. Surface evolution is c alculated by the shock-tracking method, which accurately simulates for mation and evolution of facet corners. The angle distribution for the reemission of sputtered materials is assumed to follow an arbitrary co sine law (i.e., is-proportional-tocos(beta) THETA, with THETA being th e reemission angle and beta>0). Thickness of sidewall passivation laye rs and resulting etched profiles are shown to depend sensitively on bo th the reemission angular distribution and the sticking coefficient.