BURIED RECONSTRUCTION INHIBITION OF SOLID-PHASE EPITAXY OF GE ON SI(111)

Authors
HELLMAN O
Citation
O. Hellman, BURIED RECONSTRUCTION INHIBITION OF SOLID-PHASE EPITAXY OF GE ON SI(111), Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2825-2829
Citations number
14
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
5
Year of publication
1994
Pages
2825 - 2829
Database
ISI
SICI code
0734-2101(1994)12:5<2825:BRIOSE>2.0.ZU;2-Q
Abstract
We study the epitaxial crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Silicon surface features wh ich are buried beneath the Ge film are seen to affect the rate of crys tallization. In particular, solid phase growth is observed to be enhan ced at surface steps and defects in the surface reconstruction. We dem onstrate that control of Ge crystallization morphology is possible thr ough manipulation of Si surface structure.