FILLING OF MICRON-SIZED CONTACT HOLES WITH COPPER BY ENERGETIC CLUSTER-IMPACT

Authors
HABERLAND H MALL M MOSELER M QIAN Y REINERS T THURNER Y
Citation
H. Haberland et al., FILLING OF MICRON-SIZED CONTACT HOLES WITH COPPER BY ENERGETIC CLUSTER-IMPACT, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2925-2930
Citations number
15
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Journal title
Journal of vacuum science & technology. A. Vacuum, surfaces, and films → ACNP
ISSN journal
07342101
Volume
12
Issue
5
Year of publication
1994
Pages
2925 - 2930
Database
ISI
SICI code
0734-2101(1994)12:5<2925:FOMCHW>2.0.ZU;2-J
Abstract
A completely ionized and clustered beam of Mo or Cu is deposited with variable kinetic energy on a substrate, and the filling of micron-size d contact holes on semiconductor devices is studied. An excellent hole filling is obtained for the impact of charged copper clusters, if the y contain 1000-3000 Cu atoms and impinge with a kinetic energy of abou t 10 eV per atom on a substrate having a temperature of 500 K. The mor phology of small hole fillings by slow and energetic cluster impact is discussed.