CRYSTALLIZATION KINETICS OF POLYSILAZANE-DERIVED AMORPHOUS-SILICON NITRIDE

The crystallization behaviour of amorphous silicon nitride (Si3N4) der ived from chlorine-free polysilazanes was investigated by quantitative optical microscopy. The kinetic parameters, i.e. rate constants and a ctivation energy, were calculated by a modified Avrami-Erofe'ev equati on. In contrast to former investigations on amorphous Si3N4 synthesize d from a chlorine-containing polysilazane, the crystallization tempera ture is shifted to lower (about 200 K) temperatures, while the activat ion energy remains almost constant.