CONFIRMATION OF (113) FACETS ON DIAMOND GROWN BY CHEMICAL-VAPOR-DEPOSITION

Authors
SNAIL KA LU ZP WEIMER R HEBERLEIN J PFENDER E HANSSEN LM
Citation
Ka. Snail et al., CONFIRMATION OF (113) FACETS ON DIAMOND GROWN BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 137(3-4), 1994, pp. 676-679
Citations number
10
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
137
Issue
3-4
Year of publication
1994
Pages
676 - 679
Database
ISI
SICI code
0022-0248(1994)137:3-4<676:CO(FOD>2.0.ZU;2-X
Abstract
Recent observations of {113} facets on diamond films grown epitaxially at high temperatures with a chemical vapor deposition (CVD) process h ave been confirmed. Cylinder growth experiments employing both oxygen- acetylene flames and a DC plasma torch show clear evidence of {113} fa cetting. These results lend additional support to the hypothesis that an earlier crystal growth theory developed for silicon CVD may also ap ply to diamond CVD.