FABRICATION OF SIGE SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY/

Authors
USAMI N MINE T FUKATSU S SHIRAKI Y
Citation
N. Usami et al., FABRICATION OF SIGE SI QUANTUM-WIRE STRUCTURES ON A V-GROOVE PATTERNED SI SUBSTRATE BY GAS-SOURCE SI MOLECULAR-BEAM EPITAXY/, Solid-state electronics, 37(4-6), 1994, pp. 539-541
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
539 - 541
Database
ISI
SICI code
0038-1101(1994)37:4-6<539:FOSSQS>2.0.ZU;2-#
Abstract
Fabrication of SiGe/Si quantum wire (QWR) structures on a V-groove pat terned Si substrate by gas-source Si molecular beam epitaxy (Gs-SiMBE) is reported. Cross sectional image of transmission electron microscop e (TEM) clarified a crescent shaped SiGe layer at the bottom of the V- groove. Existence of the quantized state in QWR was evidenced by photo luminescence (PL) spectra of the QWR grown by selective epitaxial grow th (SEG) technique.