TRANSPORT-PROPERTIES OF LATERAL SUPERLATTICES GROWN ON VICINAL GAAS (100) SURFACES

We report on the growth and the transport characterization of sub-mono layer inserted quantum wells grown on vicinal GaAs (100) surfaces. The deposition conditions were carefully adjusted to ensure an ordered ar ray of steps on the surface during growth. In magneto-transconductance we observe that the Shubnikov-de Haas oscillations of the samples van ish at intermediate gate-voltages. In the same regime, the resistance across the steps exhibits a pronounced plateau-like increase whereas t he resistance along the steps remains essentially unchanged. Lateral m iniband formation as well as the presence of a limited number of traps are discussed as possible explanations for the experimental findings.