MBE FABRICATION OF GAAS QUANTUM-WIRE STRUCTURES ON MESA STRIPES ALONGTHE [001] DIRECTION

We propose a novel mesa geometry for the fabrication of nanostructures by molecular beam epitaxy. We have found that (110) and (11BAR0) face ts can be formed by GaAs growth on [001] oriented mesa structures. Smo oth surface morphology and extremely low growth rate on the {110} face ts are the advantages of using this mesa direction over the convention al [01BAR1]- and [01BAR1BAR]-cleaved directions. The width of the mesa top (100) plane, which is limited by the {110} facets, can be narrowe d to the nanometer scale by GaAs growth. Quantum wire like structures, as narrow as approximately 30 nm with a thickness of approximately 30 nm at its center, were successfully fabricated.