OPTICAL-PROPERTIES OF GAAS QUANTUM DOTS FABRICATED BY MOCVD SELECTIVEGROWTH

In spite of a bottle-neck prediction, strong photoluminescence intensi ty was observed from nanometer-scale GaAs quantum dot structures in si tu fabricated by a selective growth technique using metal-organic chem ical vapor deposition. The dot structures showed a large PL peak by ex citation above the AlGaAs barrier from 8 K to room temperature, while its intensity largely decreased by excitation below the barrier. This demonstrates that carrier diffusion smoothly into the dot from the bar rier region.