INGAAS INP QUANTUM-WELLS WITH PERIODIC THICKNESS VARIATION/

We investigated the optical and structural properties of lattice-match ed InGaAs/InP quantum wells grown by metalorganic molecular beam epita xy. The growth conditions were chosen to provide a patterned InP buffe r layer surface with elongated features aligned ibn the [01BAR1] direc tion. The morphology of the patterned surface was revealed by transmis sion electron and scanning force microscopy measurements. Low temperat ure photoluminescence results are correlated with the structural prope rties of the samples. The observation of multiple emission lines indic ates the presence of elongated terraces with different thickness at th e interface of the single quantum well. Information about the carrier dynamics between these elongated terraces is obtained from the photolu minescence temperature dependence.