THE CONDUCTION-BAND SPIN SPLITTING IN TYPE-1 STRAINED AND UNSTRAINED (GAIN)AS INP QUANTUM-WELLS/

Authors
OMLING P KOWALSKI B MEYER BK HOFMANN DM WETZEL C HARLE V SCHOLZ F
Citation
P. Omling et al., THE CONDUCTION-BAND SPIN SPLITTING IN TYPE-1 STRAINED AND UNSTRAINED (GAIN)AS INP QUANTUM-WELLS/, Solid-state electronics, 37(4-6), 1994, pp. 669-672
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
669 - 672
Database
ISI
SICI code
0038-1101(1994)37:4-6<669:TCSSIT>2.0.ZU;2-G
Abstract
We present the first successful optically detected magnetic resonance experiments (ODMR) on strained and unstrained GaxIn1-xAs/InP type-I qu antum wells. The resonances attributed to electrons are in general ani sotropic and detailed results are given for the composition range 0.4 < x < 0.6. Extrapolating to the binary end points, i.e. InAs and GaAs close agreement with existing results is found. The anisotropy is expl ained within a simple model using subband calculations. It also explai ns why single-sided p-type modulation doping reduces the electron-hole wavefunction overlap, increases the radiative life-times and allows f or optical detection of magnetic resonance. A detailed discussion why hole resonances can be rules out is given.