BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL

Authors
CHANG YH YEH JJ SHEU YM WANG CC CHEN TC CHANG KH LEE CP
Citation
Yh. Chang et al., BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL, Solid-state electronics, 37(4-6), 1994, pp. 673-675
Citations number
14
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
673 - 675
Database
ISI
SICI code
0038-1101(1994)37:4-6<673:BODIIG>2.0.ZU;2-B
Abstract
Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magn eto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the s ame sample. We conclude from these data that in the magneto-optical me asurement the observed transitions are between ground and excited D- s tates.