Ng. Asmar et al., DC TRANSPORT IN INTENSE, INPLANE TERAHERTZ ELECTRIC-FIELDS IN AL(X)GA(1-X)AS HETEROSTRUCTURES AT 300-K, Solid-state electronics, 37(4-6), 1994, pp. 693-695
We report 300 K studies of the dependence of the in-plane, d.c. conduc
tivity, sigma(d.c.) (E(omega)), of a quasi 2D electron gas on the ampl
itude E(omega) and frequency of intense, far-infrared fields (omega/2p
i = 0.24-3.5 THz). We measure sigma(d.c.) (E(omega) parallel-to E(d.c.
)), where E(d.c.) is a small sensing field, and observe a monotonic de
crease in sigma(d.c.) with increasing E(omega). Although a simple scal
ing ansatz collapses the measured sigma(d.c.) (E(omega)) data onto a s
ingle curve for frequencies from 0.25-3.45 THz (at low to moderate sca
led fields), the decrease in conductivity is substantially more rapid
than expected from comparison to similar data taken by Masselink et al
. [Solid-St. Electron. 31, 337 (1988)] at 35 GHz. We tentatively attri
bute this difference to effects of a high-frequency modulation in the
electron temperature.