QUASI-ONE-DIMENSIONAL BALLISTIC ELECTRON-TRANSPORT IN IN-PLANE-GATED CHANNELS AT LIQUID-NITROGEN TEMPERATURE

Authors
DEVRIES DK PLOOG K WIECK AD
Citation
Dk. Devries et al., QUASI-ONE-DIMENSIONAL BALLISTIC ELECTRON-TRANSPORT IN IN-PLANE-GATED CHANNELS AT LIQUID-NITROGEN TEMPERATURE, Solid-state electronics, 37(4-6), 1994, pp. 701-703
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
701 - 703
Database
ISI
SICI code
0038-1101(1994)37:4-6<701:QBEIIC>2.0.ZU;2-V
Abstract
In-plane-gated quantum point contacts were fabricated in a pseuudomorp hic GaAs/InGaAs/AlGaAs heterostructure by focused ion beam implantatio n of 100 keV Ga+ ions. We see an intricate conductance quantization st ructure at 4.2 K. As the temperature is increased, the quantatization becomes less pronounced but clear remnants are observed even at liquid nitrogen temperature and above.