MBE GROWTH OF GAAS NANOMETER-SCALE RIDGE QUANTUM-WIRE STRUCTURES AND THEIR STRUCTURAL AND OPTICAL CHARACTERIZATIONS

Authors
KOSHIBA S NOGE H ICHINOSE H AKIYAMA H NAKAMURA Y INOSHITA T SOMEYA T WADA K SHIMIZU A SAKAKI H
Citation
S. Koshiba et al., MBE GROWTH OF GAAS NANOMETER-SCALE RIDGE QUANTUM-WIRE STRUCTURES AND THEIR STRUCTURAL AND OPTICAL CHARACTERIZATIONS, Solid-state electronics, 37(4-6), 1994, pp. 729-732
Citations number
27
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
729 - 732
Database
ISI
SICI code
0038-1101(1994)37:4-6<729:MGOGNR>2.0.ZU;2-Q
Abstract
A novel method for fabrication of the quantum wire structures has been investigated by which a quantum wire has been successfully fabricated on top of a (111)B facet structure with a very sharp ridge. Electron microscope study has shown that GaAs wires with the effective lateral width of 16-18 nm and with the thickness of 6-9 nm are formed at the r idge top. Photoluminescence and cathodoluminescence measurements indic ate that 1D quantum confinement of electrons is realized at the ridge top and its blue shift agrees with the quantum confined energy calcula ted for the observed wire structure.