SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS

Authors
BOGAERTS R DEKEYSER A HERLACH F PEETERS FM DEROSA F PALMSTROM CJ BREHMER D ALLEN SJ
Citation
R. Bogaerts et al., SIZE EFFECTS IN THE TRANSPORT-PROPERTIES OF THIN SC(1-X)ER(X)AS EPITAXIAL LAYERS BURIED IN GAAS, Solid-state electronics, 37(4-6), 1994, pp. 789-792
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
789 - 792
Database
ISI
SICI code
0038-1101(1994)37:4-6<789:SEITTO>2.0.ZU;2-F
Abstract
Size effects have been studied in the transport properties of Sc1-xErx As layers with thicknesses ranging from 20 to 0.8 nm. Shubnikov-de Haa s (SdH) measurements in titled magnetic fields confirm the confinement of charge carriers in the Sc1-xErxAs quantum wells. For the layers wi th thickness less than 5.7 nm, the magnetoresistance is increasingly n egative for decreasing thickness. Different size mechanisms which may be responsible for the observed behaviour are discussed.