VALLEY MIXING EFFECTS ON ELECTRON-TUNNELING TRANSMISSION IN GAAS ALASHETEROSTRUCTURES/

We proposed a set of boundary conditions for electron envelope functio ns at GaAs/AlAs (001) heterointerfaces so as to take into account GAMM A - X mixing in the effective mass method. The proposed conditions ena ble one to obtain the dependence of the mixing effect upon the parity of monomolecular layer numbers in (GaAs)N(AlAl)M superlattices. The el ectron transmission spectra of GaAs(AlAs)MGaAs single barrier structur es are calculated in the generalized effective-mass approximation. It is shown that the spectral fine structure depends essentially upon the parity of M. The low-temperatuer d.c. current-voltage characteristics of the single-barrier structure is derived taking into account the ca mel-back X-band structrure in bulk AlAs and GaAs.