Rj. Warburton et al., OPTICAL INVESTIGATION OF SUPERLATTICE ORBITS AND IMPURITY STATES IN INGAAS GAAS/, Solid-state electronics, 37(4-6), 1994, pp. 831-834
We have measured optically-detected-cyclotron-resonance on In0.05Ga0.9
5As/GaAs superlattices with large magnetic fields applied both paralle
l (Faraday) and perpendicular (Voigt) to the growth direction. Cyclotr
on resonance in the Voigt geometry reveals a band structure in the gro
wth direction. A semi-classical quantization of the Kronig-Penney disp
ersion gives good agreement with the data, providing that the cyclotro
n radius is larger than the superlattice period. We observe 1s-2p+ tra
nsitions from residual impurities which lie predominantly in the barri
er regions. The impurity transition has a remarkable behaviour in the
Voigt geometry, moving from the bulk 1s-2p+ field to close to the bulk
free electron field as the barrier thickness increases, and is exactl
y mid-way between these two limits when the cyclotron radius equals th
e barrier thickness.