OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF THE TRANSITION FROM PSEUDODIRECT TYPE-II TO TYPE-I GAAS ALAS SUPERLATTICES/

Authors
ROMANOV NG BARANOV PG MASHKOV IV LAVALLARD P PLANEL R
Citation
Ng. Romanov et al., OPTICALLY DETECTED MAGNETIC-RESONANCE STUDY OF THE TRANSITION FROM PSEUDODIRECT TYPE-II TO TYPE-I GAAS ALAS SUPERLATTICES/, Solid-state electronics, 37(4-6), 1994, pp. 911-914
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
911 - 914
Database
ISI
SICI code
0038-1101(1994)37:4-6<911:ODMSOT>2.0.ZU;2-1
Abstract
Optically detected magnetic resonance and level anticrossing spectrosc opy have been applied for the first time for a study of GaAs/AlAs supe rlattices (SL) in the transition region type-II SL (GAMMA hole in the GaAs layer and X electron in the AlAs layer)-type I Sl (GAMM (GAMMA ho le and GAMMA electron both in the GaAs layer. Three kinds of heavy-hol e excitons which are typical for type-II SL, for the transition type-I I/type-I and for type-I SL with the lifetime down to 300 ps have been evidenced in the transition region and their g-factors and exchange sp litting parameters have been measured.