BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)/

Authors
NAYAK DK USAMI N SUNAMURA H FUKATSU S SHIRAKI Y
Citation
Dk. Nayak et al., BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)/, Solid-state electronics, 37(4-6), 1994, pp. 933-936
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
933 - 936
Database
ISI
SICI code
0038-1101(1994)37:4-6<933:BPOSST>2.0.ZU;2-1
Abstract
High-quality completely relaxed SiGe buffer layer is grown on Si(100) by gas source molecular beam epitaxy. Pseudomorphic Si layer is grown on this relaxed SiGe buffer to form SiGe/strained-Si/SiGe type-II (sta ggered) quantum wells. Intense band-edge photoluminescence is observed from these quantum wells for the first time. Quantum confinement effe ct in SiGe/strained-Si/SiGe type-II quantum wells is demonstrated from the systematic shift of photoluminescence energy peaks with the width of the quantum well. Transitions from the strained-Si quantum well ar e identified as radiative recombination of excitons, which are confine d into the quantum well.