HIGH-MOBILITY 2-D HOLE GASES IN STRAINED GE CHANNELS ON SI SUBSTRATESSTUDIED BY MAGNETOTRANSPORT AND CYCLOTRON-RESONANCE

Authors
ENGELHARDT CM TOBBEN D ASCHAUER M SCHAFFLER F ABSTREITER G GORNIK E
Citation
Cm. Engelhardt et al., HIGH-MOBILITY 2-D HOLE GASES IN STRAINED GE CHANNELS ON SI SUBSTRATESSTUDIED BY MAGNETOTRANSPORT AND CYCLOTRON-RESONANCE, Solid-state electronics, 37(4-6), 1994, pp. 949-952
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
949 - 952
Database
ISI
SICI code
0038-1101(1994)37:4-6<949:H2HGIS>2.0.ZU;2-0
Abstract
High mobility two-dimensional hole gases have been achieved in p-type modulation doped Ge/SiGe heterostructures grown by MBE on a relaxed gr aded SiGe buffer. Hall mobilities of up to 15,500 cm2/Vs at carrier de nsities of 1.04 x 10(12) cm-2 are observed at 0.4 K in magnetotranspor t. The cyclotron resonance (CR) shows a narrow (FWHM 15 cm-1) and stro ng absorption of up to 15%. Quantum transitions are resolved. A splitt ing of the CR is observed, attributed to the lifting of the spin degen eracy of the +/- 3/2 states at B = 0 due to the asymmetric confinement potential. Mean CR masses of 0.14 m0 up to 0.20 m0 are found dependin g on well width and carrier density.