INTERFACE EFFECTS, BAND OVERLAP AND THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN INAS GASB INTERBAND RESONANT-TUNNELING DIODES/

We report some of the highest 77 K peak to valley ratios (PVRs) for si ngle heterojunction InAs(n)/GaSb(p) resonant conduction diodes. The de vices were grown with low background doping (n almost-equal-to p almos t-equal-to 10(16) cm-3) on (100) oriented substrates by atmospheric pr essure MOVPE, and were prepared by switching the precursors in a prede termined order, to have ''InSb'' or ''GaAs'' like interfaces. We obser ve a stronger resonance with a weaker temperature dependence when the interface is ''GaAs'' like. In all samples, the voltage of the resonan ce and the peak current both decrease with hydrostatic pressure due to the pressure induced decrease of band overlap. Our results are consis tent with a shift of - 10 meV/kbar, and overlaps of 120 +/- 20 meV and 250 +/- 50 meV respectively for ''InSb'' like and ''GaAs'' like inter faces, and are in agreement with high pressure parallel transport resu lts in superlattices with ''InSb'' like interfaces.