DIRECT OBSERVATION OF THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN CROSSED BAND-GAP SUPERLATTICES AT MAGNETIC-FIELDS OF UP TO 150-T

Authors
BARNES DJ NICHOLAS RJ WARBURTON RJ MASON NJ WALKER PJ MIURA N
Citation
Dj. Barnes et al., DIRECT OBSERVATION OF THE SEMIMETAL TO SEMICONDUCTOR TRANSITION IN CROSSED BAND-GAP SUPERLATTICES AT MAGNETIC-FIELDS OF UP TO 150-T, Solid-state electronics, 37(4-6), 1994, pp. 1027-1030
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1027 - 1030
Database
ISI
SICI code
0038-1101(1994)37:4-6<1027:DOOTST>2.0.ZU;2-N
Abstract
Ultra-high magnetic field (> 150 T) cyclotron resonance has been perfo rmed on type II InAs/Ga(In)Sb superlattices. The electron density data reveals a dramatic depopulation at a critical magnetic field correspo nding to the uncrossing of the lowest electron and hole Landau levels. The magnitude of this critical field decreases with decreasing superl attice period.