LUMINESCENCE UP-CONVERSION BY AUGER PROCESS AT INP-ALINAS TYPE-II INTERFACES

Authors
TITKOV A SEIDEL W ANDRE JP VOISIN P VOOS M
Citation
A. Titkov et al., LUMINESCENCE UP-CONVERSION BY AUGER PROCESS AT INP-ALINAS TYPE-II INTERFACES, Solid-state electronics, 37(4-6), 1994, pp. 1041-1044
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1041 - 1044
Database
ISI
SICI code
0038-1101(1994)37:4-6<1041:LUBAPA>2.0.ZU;2-G
Abstract
Luminescence of bulk InP at 1.42 eV is observed when exciting a type I I InP-AlInAs single heterojunction above the heterojunction bandgap at 1.23 eV. We show that this energy up-conversion results from Auger pr ocess producing high energy holes which redistribute over the heterost ructure and recombine with native electrons in the InP layer.