RELAXATION AND RADIATIVE DECAY OF EXCITONS IN GAAS QUANTUM DOTS

Citation
U. Bockelmann et al., RELAXATION AND RADIATIVE DECAY OF EXCITONS IN GAAS QUANTUM DOTS, Solid-state electronics, 37(4-6), 1994, pp. 1109-1112
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1109 - 1112
Database
ISI
SICI code
0038-1101(1994)37:4-6<1109:RARDOE>2.0.ZU;2-0
Abstract
Radiative and non-radiative exciton states of quantum dots with parabo lic lateral potentials are calculated in an effective-mass approximati on. Energy spectrum, radiative recombination rates and LA phonon scatt ering rates of the different excitons are discussed in their dependenc e on the lateral confinement potential. For sufficiently strong latera l potentials the relaxation of excitons by LA phonon emission becomes so weak that several excitonic levels should be observable in a photol uminescence experiment even at low excitation intensity. The theoretic al results are compared to microscopic photoluminescence data collecte d from a series of single GaAs quantum dots fabricated by laser induce d local interdiffusion.