DETERMINATION OF BAND-EDGE OFFSET BY WEAK-FIELD HALL MEASUREMENT ON MBE PBSE PBEUSE MULTIQUANTUM-WELL STRUCTURES ON KCL/

Authors
SHI Z LAMBRECHT A TACKE M
Citation
Z. Shi et al., DETERMINATION OF BAND-EDGE OFFSET BY WEAK-FIELD HALL MEASUREMENT ON MBE PBSE PBEUSE MULTIQUANTUM-WELL STRUCTURES ON KCL/, Solid-state electronics, 37(4-6), 1994, pp. 1113-1116
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1113 - 1116
Database
ISI
SICI code
0038-1101(1994)37:4-6<1113:DOBOBW>2.0.ZU;2-S
Abstract
Weak field Hall effect measurements between 34 and 300 K were applied to three PbSe/PbEuSe (E(g)[PbEuSe] = 440 meV at 300 K) MQW samples on KCl. By calculating the quasi-Fermi energy levels the temperature depe ndent band-edge offsets were determined. The valence band offset DELTA E(v) was found to be 65 meV at 34 K with a positive temperature coeffi cient of 0.68 meV/K. Thus DELTAE(v) = 43 + 0.68T (meV) is suggested.