PBSRS-MQW LASERS AND THE EFFECT OF QUANTUM-WELL ON OPERATION TEMPERATURE

Laser operation conditions of the PbSrS double heterostructure (DH) an d multiple quantum well (MQW) lasers are discussed in terms of the fre e carrier absorption. It is shown that the MQW structure is useful red ucing the threshold current and increasing the operation temperature o f the IV-VI narrow gap semiconductor lasers. PbSrS/PbS MQW laser was p repared by hot wall epitaxy, and the operation properties were compare d with those of the PbSrS/PbS and PbSrS/PbSrS DH lasers. The MQW laser showed relatively low threshold currents and the laser operated up to 255 K (2.80 mum) in pulsed operation, which is the highest ever repor ted for PbS based lasers.