NEGATIVE CONDUCTANCE AT THZ FREQUENCIES IN MULTIWELL STRUCTURES

Authors
Citation
Ws. Truscott, NEGATIVE CONDUCTANCE AT THZ FREQUENCIES IN MULTIWELL STRUCTURES, Solid-state electronics, 37(4-6), 1994, pp. 1235-1238
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1235 - 1238
Database
ISI
SICI code
0038-1101(1994)37:4-6<1235:NCATFI>2.0.ZU;2-W
Abstract
An algorithm by which the exact first order a.c. response of quantum e lectronic devices, including tunnelling structures, may be calculated rapidly is described. Novel multi-well tunnelling structures with nega tive conductance maxima at 1.4 x 10(12) Hz (1.4 THz) and 14 THz at tem peratures of 80 and 300 K respectively are presented. Devices of this sort are expected to operate as power sources, mixers and amplifiers b etween 0.5 and 20 THz. The effects of bias and departures from the ide al geometry are discussed as are the factors which indicate that such devices are realisable in practice.