PERPENDICULAR TRANSPORT THROUGH ROUGH INTERFACES IN THE METALLIC REGIME

Citation
A. Brataas et Gew. Bauer, PERPENDICULAR TRANSPORT THROUGH ROUGH INTERFACES IN THE METALLIC REGIME, Solid-state electronics, 37(4-6), 1994, pp. 1239-1242
Citations number
22
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1239 - 1242
Database
ISI
SICI code
0038-1101(1994)37:4-6<1239:PTTRII>2.0.ZU;2-X
Abstract
Perpendicular transport through an interface in the metallic regime is considered. The semiclassical theory presented is based on the Landau er-Buttiker formalism taking into account an effective mass mismatch a t the interface and a non-zero average of random scattering potentials . The transmission probability for a given mode is found in terms of t he effective mass and the conduction band bottom to the left and to th e right of the interface, the Fermi energy, the self-energy of the ele ctron, and the transverse wave vector of the electron. The diffuse and specular contributions to the interface roughness scattering are show n to be equally important in the weak scattering limit. Predictions fo r the transport properties of interfaces with a low concentration of s trongly scattering defects should be accessible to verification by exp eriments. The theory is applied to the spin-valve effect in magnetic m ultilayers.