GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS

Citation
Ag. Markelz et al., GIANT 3RD-ORDER NONLINEAR SUSCEPTIBILITIES FOR INPLANE FAR-INFRARED EXCITATION OF SINGLE INAS QUANTUM-WELLS, Solid-state electronics, 37(4-6), 1994, pp. 1243-1245
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
37
Issue
4-6
Year of publication
1994
Pages
1243 - 1245
Database
ISI
SICI code
0038-1101(1994)37:4-6<1243:G3NSFI>2.0.ZU;2-I
Abstract
Third-order, free-carrier nonlinear susceptibilities, chi(3), have bee n measured between 19 and 23 cm-1 for three InAs/AlSb quantum wells wi th sheet densities between 2.5 x 10(12) cm-2 and 8 x 10(12) cm-2. We f ind that these wells are strongly nonlinear at far-infrared frequencie s: odd harmonics ninth order have been observed at high incident inten sities, and the peak value of chi(3) reaches approximately 1 esu. This is several orders of magnitude larger than previously reported values for chi(3) in bulk n-GaAs (10(-4) esu)[1] and in polyacetylene (10(-7 ) esu)[2]. The large magnitude of chi(3) is attributed to the high car rier density in the InAs wells, and to the strong non-parabolicity of the conduction band in InAs. However, the free-carrier chi(3) for bulk InAs predicts a density-dependence different from that observed, and the measured decrease in chi(3) with increasing intensity indicates no n-perturbative response. We find that the anisotropy of chi(3) display s the expected 4-fold symmetry.