PRESSURE-DEPENDENCE OF POSITRON DISTRIBUTION IN SI

Citation
H. Aourag et al., PRESSURE-DEPENDENCE OF POSITRON DISTRIBUTION IN SI, Materials chemistry and physics, 38(4), 1994, pp. 348-354
Citations number
70
Categorie Soggetti
Material Science
ISSN journal
02540584
Volume
38
Issue
4
Year of publication
1994
Pages
348 - 354
Database
ISI
SICI code
0254-0584(1994)38:4<348:POPDIS>2.0.ZU;2-N
Abstract
We have obtained the valence electron and positron charge densities in Si from wavefunctions derived in a model pseudopotential band structu re calculation at normal and under hydrostatic pressure. We find that the positron density is maximum in the open interstices and is exclude d not only, as usual, from the ion cores but also to a considerable de gree from the valence bonds.