M. Hollfelder et al., (ALGA) AS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY USING A N2 CARRIER, Journal of electronic materials, 23(10), 1994, pp. 1061-1065
We have studied the growth of AlxGa1-xAs (0.24 < x < 0.34 ) using a N2
carrier in low pressure metalorganic vapor phase epitaxy. Growth temp
erature, gas velocity, and V/III ratio were varied to achieve optimum
growth conditions. Layers with excellent morphology and electrical and
optical properties comparable to samples grown using standard conditi
ons (with a H-2 carrier) can be deposited in a nitrogen ambient. Al0.2
4Ga0.76As bulk material grown on an buffer layer with a background dop
ing of 1.3 x 10(16) cm-3 showed Hall mobilities of 4500 and 2300 cm2/V
s at 77 and 300K. Photoluminescence studies at 2K revealed strong boun
d exciton transitions with a full width at half maximum of 5.2 meV for
Al0.29Ga0.71As.