DESIGN, FABRICATION, AND CHARACTERIZATION OF STRIPED CHANNEL HEMTS

Authors
BOLLAERT S LEGRIS P DELOS E CAPPY A DEBRAY P BLANCHET J
Citation
S. Bollaert et al., DESIGN, FABRICATION, AND CHARACTERIZATION OF STRIPED CHANNEL HEMTS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1716-1724
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
10
Year of publication
1994
Pages
1716 - 1724
Database
ISI
SICI code
0018-9383(1994)41:10<1716:DFACOS>2.0.ZU;2-K
Abstract
A theoretical and experimental study of striped channel HEMT's is pres ented in this paper. The source to drain region of striped channel HEM T's is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves the transconductance value. Striped channel HEMT's have been successfully realized and characterized. The experimental results agr ee well with the theoretical ones. The structure of an optimized devic e is then proposed.