INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB ALSB/INAS/GASB/ALSB/INAS STRUCTURES/

Authors
WANG YH LIU MH HOUNG MP CHEN JF CHO AY
Citation
Yh. Wang et al., INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB ALSB/INAS/GASB/ALSB/INAS STRUCTURES/, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1734-1741
Citations number
24
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
10
Year of publication
1994
Pages
1734 - 1741
Database
ISI
SICI code
0018-9383(1994)41:10<1734:IONDRP>2.0.ZU;2-B
Abstract
The negative differential resistance (NDR) phenomena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. E lectron has resonantly achieved interband tunneling through the InAs/G aSb broken-gap quantum well. The InAs well width causes significant va riations of the peak current density and NDR behaviors. The peak curre nt density varies exponentially with the AlSb barrier thickness. The m ultiple NDR behavior was observed with appropriate InAs well and AlSb barrier thickness, e.g., 30 angstrom thick AlSb barrier and 240 angstr om wide InAs well. Only single negative resistance has, otherwise, bee n seen. The three-band model was used to interpret the effect of the I nAs well and AlSb barrier on the current-voltage characteristics of Ga Sb/AlSb/InAs/GaSb/AlSb/InAs structures.