MEASURED DC PERFORMANCE OF LARGE ARRAYS OF SILICON FIELD EMITTERS

Authors
PALMER WD MANCUSI JE BALL CA JOINES WT MCGUIRE GE TEMPLE D VELLENGA DG YADON L
Citation
Wd. Palmer et al., MEASURED DC PERFORMANCE OF LARGE ARRAYS OF SILICON FIELD EMITTERS, I.E.E.E. transactions on electron devices, 41(10), 1994, pp. 1866-1870
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
41
Issue
10
Year of publication
1994
Pages
1866 - 1870
Database
ISI
SICI code
0018-9383(1994)41:10<1866:MDPOLA>2.0.ZU;2-7
Abstract
Large arrays of silicon field emitters are being produced at MCNC for use in RF and microwave amplifers and other high-intensity electron be am source applications. Significant levels of both total emitted curre nt (up to 7 mA) and current density (7 A/cm2) are obtained using gate electrode potentials less than 250 V with emission efficiencies as hig h as 99%. Large arrays of field emitters are operated at 100% duty cyc le for over 18 hours. Data from devices with 1197 and 232 630 tips are presented, along with electrical yield statistics for arrays of other sizes.